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| PHOTOMULTIPLIER TUBE R7154 High Sensitivity Solar Blind Photocathode (160 to 320 nm) 28mm (1-1/8 Inch) Diameter, 9-Stage, Side-On Type FEATURES Spectral Response ........................... 160 to 320 nm Cathode Sensitivity Radiant at 254 nm .......................... 62mA/W Typ. Quantum Efficiency at 254 nm ..................... 30 % Anode Sensitivity (at 1000V) Radiant at 254 nm ................... 6.2 x 105A/W Typ. APPLICATIONS Emission Spectroscopy UV Spectrophotometer TPMSF0073 GENERAL Parameter Spectral Response Wavelength of Maximum Response Photocathode Material Minimum Effective Area Window Material Dynode Secondary Emitting Surface Structure Number of Stages Direct Interelectrode Capacitances Anode to Last Dynode Anode to All Other Electrodes Base Weight Suitable Socket Suitable Socket Assembly Description/Value 160 to 320 254 Cs-Te 8 x 24 Quartz Sb-Cs Circular-cage 9 4 6 11-pin base JEDEC No.B11-88 45 E678-11A(option) E717-21(option) Unit nm nm -- mm -- -- -- -- pF pF Figure 1: Typical Spectral Response TPMSB0128EA 100 CATHODE RADIANT SENSITIVITY (mA/W) QUANTUM EFFICIENCY (%) CATHODE RADIANT SENSITIVITY 10 1 QUANTUM EFFICIENCY 0.1 g -- -- 0.01 100 200 300 400 500 WAVELENGTH (nm) Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office. Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. (c)1997 Hamamatsu Photonics K.K PHOTOMULTIPLIER TUBE R7154 MAXIMUM RATINGS (Absolute Maximum Values) Parameter Supply Voltage Between Anode and Cathode Between Anode and Last Dynode Average Anode CurrentA Ambient Temperature Rating 1250 250 0.1 -80 to +50 Unit Vdc Vdc mA C CHARACTERISTICS (at 25C) Parameter Cathode sensitivity Quantum Efficiency at 254 nm Radiant at 254nm Anode Sensitivity Radiant at 254nm Gain Anode Dark Current (After 30 minutes storage in the darkness) ENI (Equivalent Noise Input) E G F Min. -- -- Typ. 30 62 Max. -- -- Unit % mA/W 1.0 x 105 6.2 x 105 -- -- -- 1.0 x 107 1 9.1 x 10-17 2.2 22 1.2 -- -- 10 -- A/W -- nA W ns ns ns Time Response Anode Pulse Rise TimeH Electron Transit TimeI Transit Time Spread (TTS)J Anode Current StabilityK Light Hysteresis Voltage Hysteresis -- -- -- -- -- -- -- -- 0.1 1.0 -- -- % % NOTES A: Averaged over any interval of 30 seconds maximum. B: The light source is a tungsten filament lamp operated at a distribution temperature of 2856K. Supply voltage is 100 volts between the cathode and all other electrodes connected together as anode. C: Red/White ratio is the quotient of the cathode current measured using a red filter(Toshiba R-68) interposed between the light source and the tube by the cathode current measured with the filter removed under the same conditions as Note B. D: The value is cathode output current when a blue filter(Corning CS-558 polished to 1/2 stock thickness) is interposed between the light source and the tube under the same condition as Note B. E: Measured with the same light source as Note B and with the voltage distribution ratio shown in Table 1 below. F: Measured with the same supply voltage and voltage distribution ratio as Note E after removal of light. G: ENI is an indication of the photon-limited signal-to-noise ratio. It refers to the amount of light in watts to produce a signal-to-noise ratio of unity in the output of a photomultiplier tube. 2q*ldb*G*f S where q = Electronic charge (1.60 x 10-19 coulomb). ldb = Anode dark current(after 30 minutes storage) in amperes. G = Gain. f = Bandwidth of the system in hertz. 1 hertz is used. S = Anode radiant sensitivity in amperes per watt at the wavelength of peak response. H: The rise time is the time for the output pulse to rise from 10% to 90% of the peak amplitude when the entire photocathode is illuminated by a delta function light pulse. ENI = Table 1: Voltage Distribution Ratio Electrode K Dy1 Dy2 Dy3 Dy4 Dy5 Dy6 Dy7 Dy8 Dy9 P 1 1 1 1 1 1 1 1 Distribution 11 Ratio Supply Voltage=1000Vdc K:Cathode Dy:Dynode P:Anode I: The electron transit time is the interval between the arrival of delta function light pulse at the entrance window of the tube and the time when the anode output reaches the peak amplitude. In measurement, the whole photocathode is illuminated. J: Also called transit time jitter. This is the fluctuation in electron transit time between individual pulses in the signal photoelectron mode, and may be defined as the FWHM of the frequency distribution of electron transit times. K: Hysteresis is temporary instability in anode current after light and voltage are applied. Hysteresis = l max -- l min. x 100(%) li (1) Light Hysteresis The tube is operated at 750 volts with an anode current of 1 micro-ampere for 5 minutes. The light is then removed from the tube for a minute. The tube is then re-illuminated by the previous light level for a minute to measure the variation. (2) Voltage Hysteresis The tube is operated at 300 volts with an anode current of 0.1 microampere for 5 minutes. The light is then removed from the tube and the supply voltage is quickly increased to 800 volts. After a minute, the supply voltage is then reduced to the previous value and the tube is reilluminated for a minute to measure the variation. ANODE CURRENT li l max. l min. TIME 0 5 6 7 (minutes) TPMSB0002EA Figure 2: Typical Gain and Anode Radiant Sensitivity 108 TPMSB0129EA Figure 3: Typical Time Response TPMSB0004EB 108 TYPICAL CURRENT AMPLIFICATION 100 80 60 ANODE RADIANT SENSITIVITY (A/IW) 107 107 40 TRAN SIT T IME 106 106 20 105 TYPICAL ANODE SENSITIVITY 104 MINIMUM ANODE SENSITIVITY 103 105 TIME (ns) GAIN 10 8 6 104 4 RISE TIME 103 2 102 500 700 1000 102 1500 1 300 500 700 1000 1500 SUPPLY VOLTAGE (V) SUPPLY VOLTAGE (V) PHOTOMULTIPLIER TUBE R7154 Figure 6: Dimensional Outline and Basing Diagram 28.5 1.5 T9 BULB PHOTOCATHODE 24MIN. 8MIN. DY5 DY4 4 80MAX. DY3 3 94MAX. DY2 2 1 DY1 11 K 10 49.0 0.25 DY6 6 Unit: mm Figure 7: Socket E678-11A (Option) 49 38 5 7 DY7 8 DY8 9 DY9 5 3.5 P DIRECTION OF LIGHT Bottom View (Basing Diagram) 29 11 PIN BASE JEDEC No.B11-88 TPMSA0005EB TACCA0064EA Figure 8: D Type Socket Assembly E717-21 (Option) 5 PMT P R10 DY9 38.0 0.3 49.0 0.3 29 DY8 DY7 DY6 9 R9 8 R8 7 R7 6 5 4 R4 3 R3 DY2 DY1 K 2 R2 1 R1 11 -HV AWG22 (VIOLET) R6 R to R10 : 330kW C1 to C3 : 0.01mF R5 DY4 C1 C2 C3 SOCKET PIN No. 10 SIGNAL GND SIGNAL OUTPUT RG-174/U (BLACK) POWER SUPPLY GND AWG22 (BLACK) 33.0 0.3 3.5 4 DY5 L 31.0 0.5 HOUSING (INSULATOR) DY3 450 10 POTTING COMPOUND Type No. L E717-21 41 0.5 E717-63 30 0.5 TACCA0002EC * Hamamatsu also provides compact high voltage power supplies and C956 series DP type socket assemblies which incorporate a DC to DC converter type high voltage power supply. Warning--Personal Safety Hazards Electrical Shock--Operating voltages applies to this device present a shock hazard. HAMAMATSU PHOTONICS K.K., Electoron Tube Center 314-5, Shimokanzo, Toyooka-village, Iwata-gun, Shizuoka-ken, 438-0193, Japan, Telephone: (81)539/62-5248, Fax: (81)539/62-2205 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, Bridgewater. N.J. 08807-0910, U.S.A., Telephone: (1)908-231-0960, Fax: (1)908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-2658 France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: (33)1 69 53 71 00, Fax: (33)1 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limted: Lough Point, 2 Gladbeck Way, Windmill Hill, Enfield, Middlesex EN2 7JA, United Kingdom, Telephone: (44)181-367-3560, Fax: (44)181-367-6384 North Europe: Hamamatsu Photonics Norden AB: Farogatan 7, S-164-40 Kista Sweden, Telephone: (46)8-703-29-50, Fax: (46)8-750-58-95 Cat. No. TPMS1036E01 Italy: Hamamatsu Photonics Italia: S.R.L.: Via Della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39)2-935 81 733, Fax: (39)2-935 81 741 SEPT. 1997 T Printed in Japan (1,000) 18 32.2 0.5 4 33 |
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